A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
نویسندگان
چکیده
A novel gate-all-around (GAA) poly-Si nanowire (NW) floating gate (FG) memory device was fabricated and characterized. The enhanced electric field around the corners of the nanowire channels boosts the P/E process and thus the operation voltages are dramatically lowered. Furthermore, the non-localized trapping feature characteristic of the FG makes the injection or ejection of electrons easier during the P/E operation.
منابع مشابه
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